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You searched for all technologies in the category Microelectronics.
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Greatly Improving EMI Filter High Frequency Performances Through the Cancellation of Inductive Couplings and Equivalent Series Inductance (ESL) of Capacitors

VTIP:04.031

Because EMI standards are enforced by governments in the world, all electronic equipment uses EMI filters. The parasitics, including parasitics of components and parasitic couplings between components, affect EM1 filter performance significantly. At high frequency range, these parasitics determine filter performance. Usually, in order to reduce couplings between components, companies ...

Body Diode Conduction Loss Elimination and Gate Drive Loss Reduction Based on a Novel Gate Driver

VTIP:04.004

As the microprocessor's performance increases, today's single-stage VR is not suitable any more because it requires a large amount of output capacitors. Two-stage approach is proposed to push the switching frequency, reduce the output capacitance and save cost. However, two-stage approach has only solved the switching loss issue, ...

Securing Programmable Logic Configuration Streams via Biometric Data

VTIP:02.117

Configurable logic provides significant potential for producing easily maintainable, inexpensive, field-upgradeable devices. From cellular phones that can change protocols as a user switches providers to upgradeable network routers, to reconfigurable digital interfaces for musical instruments, there are many applications that are currently seeing the benefits of this type of ...

Diode Assisted Gate Turn-off Thyristor

VTIP:99.063

This invention breaks the 20V maximum snubberless turn-off voltage limitation of a hard driven GTO and enables a significant increase in turn-off current commutation rate. This invention is especially useful for very high current (e.g. 6-inch GTO) hard-driven GTOs.

6,426,666 (99.063)

High Temperature Electrode-Barriers for Ferroelectric and Other Capacitor Structures

VTIP:96.053

A device for high density ferroelectric capacitors. The device consists of a multilayer metal oxide/metal/metal oxide structure laid on top of either a silicon or oxidized silicon substrate. A ferroelectric film is laid on top of this multilayer structure and the multilayer structure is then repeated on top ...

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